Snapshot infrared sensor
US11656129B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/202
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared sensor includes an assembly of pixels juxtaposed in rows and in columns, each pixel integrating an imaging microbolometer and an integrator assembly. The integrator assembly includes a transistor assembled as an amplifier, and a capacitor assembled in feedback on the transistor between an output node and an integration node. The integration node is connected to a skimming transistor operating as a current mirror with a skimming control transistor offset outside of the pixel. A skimming current flowing through the skimming control transistor is controlled according to the temperature of at least one thermalized microbolometer. The current mirror assembly enables to transmit the skimming current flowing through said skimming control transistor onto the integration node so that the capacitor integrates the difference between a current flowing through the imaging microbolometer and the skimming current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.