Semiconductor memory devices and memory systems
US11656935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Oct 5, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4062
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine circuit, an error information register and a control logic circuit. The memory cell array includes memory cell rows. The control logic circuit controls the ECC engine circuit to generate an error generation signal based on performing a first ECC decoding on first sub-pages in a first memory cell row in a scrubbing operation and based on performing a second ECC decoding on second sub-pages in a second memory cell row in a normal read operation on the second memory cell row. The control logic circuit records error information in the error information register and controls the ECC engine circuit to skip an ECC encoding and an ECC decoding on a selected memory cell row of the first memory cell row and the second memory cell row based on the error information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.