Semiconductor substrate and method of fabricating the same
US11658061B2 · kind B2 · utility
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Key dates
| Filing date | Jul 15, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor substrate includes the following steps. A carrier substrate is provided, and a plasma treatment is performed on the surface of the carrier substrate. A polycrystalline semiconductor layer is formed on the surface of the carrier substrate. A rapid thermal treatment is then performed on the polycrystalline semiconductor layer. A buried dielectric layer is then formed on the polycrystalline semiconductor layer. Afterwards, a single crystalline semiconductor layer is formed on the buried dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.