Semiconductor device
US11658075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/961
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.