Display apparatus having a silicon nitride buffer layer and method of manufacturing the same
US11658190B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Dec 28, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Nov 16, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The thin film transistor includes an active layer. A display element is electrically connected to the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.