Image sensors having grating structures therein that provide enhanced diffraction of incident light
US11658194B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2019 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.