III-V semiconductor device with integrated power transistor and start-up circuit
US11658236B2 · kind B2 · utility
2Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | May 7, 2019 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | May 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A III-nitride semiconductor based heterojunction power device including: a first heterojunction transistor formed on a substrate, and a second heterojunction transistor formed on the substrate. One of the first heterojunction transistor and the second heterojunction transistor is an enhancement mode field effect transistor and the other one of the first heterojunction transistor and the second heterojunction transistor is a depletion mode field effect transistor. The enhancement mode transistor acts as a main power switch, and the depletion mode transistor acts as a start-up component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.