Patent · US Active

Method of manufacturing light emitting diodes and light emitting diode

US11658265B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Bastian Galler · Regensburg, DE
Jürgen Off · Regensburg, DE

Key dates

Filing date	Dec 22, 2021
Grant date	May 23, 2023
Priority date	—
Expiry date	Dec 22, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/816
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm−2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.