Light-emitting device
US11658269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jul 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.