Ultra-low leakage electrostatic discharge device with controllable trigger voltage
US11658480B2 · kind B2 · utility
0Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Oct 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide an electrostatic discharge (ESD) device, including: an input pad; an underlapped field effect transistor (UL-FET) with a trigger voltage Vt, including: an underlapped drain region coupled to the input pad; a source region coupled to ground; and a gate structure coupled to the input pad; and a blocking layer separating the underlapped drain region from the gate structure of the UL-FET by an underlap distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.