Patent · US Active

Magnetoelectric inverter

US11658663B2 · kind B2 · utility

0Cited by
5References
6Claims
0Family size

Assignees

Inventors

Key dates

Filing dateMay 29, 2022
Grant dateMay 23, 2023
Priority date
Expiry dateMay 29, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.