Integrated light-emitting device and fabricating method thereof

US11659731B2 · kind B2 · utility

Assignee

• TCL TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Hui Lei · Scarsdale, US
• Weiran Cao · Longbeilingcun, CN
• Lei Qian · Huizhou, CN

Key dates

• Filing date: Jul 24, 2019
• Grant date: May 23, 2023
• Expiry date: Jul 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/331

Abstract

An integrated light-emitting device and a fabricating method thereof. The integrated light-emitting device includes a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated; the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light; and the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit configured to emit light toward the first electrode along the second electrode.