Memory cell and method of forming the same
US11659779B2 · kind B2 · utility
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5References
10Claims
0Family size
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Key dates
| Filing date | Mar 8, 2019 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Mar 8, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various embodiments may provide a memory cell. The memory cell may include an active electrode including an active electrode material. The memory cell may also include a first noble electrode contact with the active electrode, the first noble electrode being a patterned electrode including a noble electrode material. The memory cell may further include a resistive switching layer in contact with the active electrode and the first noble electrode. The memory cell may additionally include a second noble electrode including a noble electrode material, the second noble electrode in contact with the resistive switching layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.