Patent · US Active

TE polarizer based on SOI platform

US11662521B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 2021
Grant dateMay 30, 2023
Priority date
Expiry dateAug 9, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12116
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A silicon photonic device includes a silicon-on-insulator substrate, a waveguide, and a plate. The silicon-on-insulator substrate includes a silicon layer and a silicon dioxide layer. The waveguide is disposed on the silicon-on-insulator substrate. The silicon dioxide layer at least partially overlays the waveguide. The plate exhibits metallic characteristics and is at least partially embedded in the silicon dioxide layer of the silicon-on-insulator substrate. The plate is spaced apart from the waveguide and is configured to mitigate transverse magnetic emission propagating through the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.