Semiconductor structure and fabrication method thereof

US11664227B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Qian Zhang · Shanghai, CN
• Bo SU · Shanghai, CN
• Tao Dou · Hefei, CN
• Lin Sun · Shanghai, CN

Key dates

• Filing date: Sep 17, 2020
• Grant date: May 30, 2023
• Expiry date: Jul 24, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0337
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes providing a to-be-etched layer; forming an initial mask layer over the to-be-etched layer; forming a patterned structure, on the initial mask layer and exposing a portion of the initial mask layer; forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer; removing the patterned structure and the barrier layer; and forming a mask layer on a top surface of the to-be-etched layer by removing the un-doped region. The mask layer includes a first opening exposing the top surface of the to-be-etched layer.