Patent · US Active

Transferring information across a high voltage gap using capacitive coupling with dti integrated in silicon technology

US11664307B2 · kind B2 · utility

0Cited by

9References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Lars Mueller-Meskamp · Dresden, DE
Berthold Astegher · Klagenfurt, AT
Hermann Gruber · Leverkusen, DE
Thomas Neidhart · Klagenfurt, AT

Key dates

Filing date	Nov 3, 2021
Grant date	May 30, 2023
Priority date	—
Expiry date	Nov 3, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/665
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.