Integrated circuit semiconductor device and method of manufacturing the same
US11664379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2021 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Jul 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
An integrated circuit semiconductor device includes a first region including a first transistor and a second region in contact with the first region in a second direction. The first transistor includes a first active fin extending in a first direction, a first gate dielectric layer extending from the first active fin onto a first isolation layer in the second direction, and a first gate electrode on the first gate dielectric layer. The second region includes a second transistor including a second active fin extending in the first direction, a second gate dielectric layer extending from the second active fin onto a second isolation layer in the second direction, and a second gate electrode on the second gate dielectric layer. The integrated circuit semiconductor device includes a gate dielectric layer removal region proximate a boundary between the first region and the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.