Semiconductor device, power module and method for manufacturing the semiconductor device
US11664466B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 1, 2018 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Aug 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/074
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.