Image sensor
US11665443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2022 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Feb 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/616
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.