Processor element for quantum information processor
US11665980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2020 |
| Grant date | May 30, 2023 |
| Priority date | — |
| Expiry date | Jul 9, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Processor elements are disclosed herein. A processor element comprises a silicon layer. The processor element further comprises a dielectric layer disposed upon and forming an interface with the silicon layer. The processor element further comprises a conductive via in contact with the dielectric layer, the conductive via comprising a metallic portion having an interface end closest to the dielectric layer and a distal end. A cross-sectional area of the interface end of the metallic portion of the conductive via is less than or equal to 100 nm by 100 nm. In use, the application of a bias potential to the distal end of the conductive via induces a quantum dot at the interface between the dielectric layer and the silicon layer, the quantum dot for confining one or more electrons or holes in the silicon layer. Methods are also described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.