SiC MOSFET and method for manufacturing the same
US11670502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Sep 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a silicon carbide MOSFET device can include: providing a substrate with a first doping type; forming a patterned first barrier layer on a first surface of the substrate; forming a source region with a first doping type in the substrate; forming a base region with a second doping type and a contact region with a second doping type in the substrate, and forming a gate structure. The first barrier layer can include a first portion and a second portion, the first portion can include a semiconductor layer and a removable layer different from the semiconductor layer, and the second portion can only include the removable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.