Modified direct bond interconnect for FPAs
US11670616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Jun 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of hybridizing an FPA having an IR component and a ROIC component and interconnects between the two components, includes the steps of: providing an IR detector array and a Si ROIC; depositing a dielectric layer on both the IR detector array and on the Si ROIC; patterning the dielectric on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC; depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively, exposed on a top surface of the IR detector array and the Si ROIC; activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and closely contacting the indium bumps of the IR detector array and the Si ROIC by bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC. Another exemplary method provides a pillar support of the indium bumps on the IR detector array rather than a full dielectric layer support. Another exemplary method includes a surrounding dielectric edge support between the IR detect…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.