Image sensor and method of fabricating same
US11670661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2020 |
| Grant date | Jun 6, 2023 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/182
Abstract
An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.