Patent · US Active

Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers

US11674237B2 · kind B2 · utility

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11Claims
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Key dates

Filing dateMay 14, 2019
Grant dateJun 13, 2023
Priority date
Expiry dateApr 13, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/85
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.