System and method for estimating junction temperatures of a power semiconductor module

US11674856B2 · kind B2 · utility

Assignee

• AIRBUS (S.A.S.) · FR

Inventors

• Gerhard Steiner · Neuenstein, DE
• Florian Kapaun · Schweinhub, DE

Key dates

• Filing date: Apr 13, 2021
• Grant date: Jun 13, 2023
• Expiry date: Aug 26, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/34
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A system for estimating junction temperatures of a power semiconductor module includes a constant current source to apply constant drain current to a drain terminal of a power semiconductor device, an adjustable gate voltage source to apply a gate voltage signal to a gate terminal, a drain-source voltage sensor between the drain terminal and the source terminal and configured to measure a value of the current drain-source voltage across the power semiconductor device and output a corresponding drain-source voltage signal, a gate controller to determine a difference between the drain-source voltage signal and a constant reference voltage and control output of the adjustable gate voltage source dependent on the determined difference, and a system controller to switch the power semiconductor device to its fully conducting state and to estimate junction temperature within the power semiconductor device in dependency from the on-state resistance in the fully conducting state.