Patent · US Active

Gas sensor

US11674916B2 · kind B2 · utility

0Cited by
2References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2018
Grant dateJun 13, 2023
Priority date
Expiry dateJun 3, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/226
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.