Layered structure with high dielectric constant for use with active matrix backplanes

US11675244B2 · kind B2 · utility

Assignee

• E Ink Holdings Inc. · TW

Inventors

• Cristina Visani · Cambridge, US
• Stephen J. Telfer · Arlington, US
• Kosta Ladavac · Somerville, US
• Kenneth R. Crounse · Somerville, US
• Timothy J. O'Malley · Wakefield, US
• Teck Ping Sim · Waltham, US

Key dates

• Filing date: Apr 30, 2020
• Grant date: Jun 13, 2023
• Expiry date: Jun 12, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2001/1678
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Layered dielectric materials for use in controlling dielectric strength in microelectronic devices, especially as they relate to electrophoretic and electrowetting applications. Specifically, a combination of a first atomic layer deposition (ALD) step, a sputtering step, and a second ALD step result in a layer that is chemically robust and nearly pinhole free. The dielectric layer may be disposed on the transparent common electrode of an electrophoretic display or covering the pixelated backplane electrodes, or both.