Patent · US Active

Wordline boost driver

US11676652B2 · kind B2 · utility

0Cited by
9References
17Claims
0Family size

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Key dates

Filing dateOct 7, 2021
Grant dateJun 13, 2023
Priority date
Expiry dateOct 7, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/1657
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An example apparatus for writing a bit to a memory cell includes wordline driver circuitry configured to generate a first voltage in response to a row access enable signal. The apparatus also includes boost driver circuitry coupled to the wordline driver circuitry. The boost driver circuitry is configured to charge a capacitor using the first voltage and to generate a second voltage using the first voltage and a voltage at the capacitor in response to a boost enable signal. The apparatus also includes a wordline coupled to the memory cell and the wordline driver circuitry. The wordline is configured to output the first voltage or the second voltage to the memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.