Photocathode with improved quantum yield
US11676790B2 · kind B2 · utility
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Key dates
| Filing date | May 22, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jun 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2231/5001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electromagnetic radiation detector includes an inlet window intended to receive a stream of incident photons, as well as a photocathode in the form of a semiconductive layer. A conductive layer is deposited on the downstream face of the inlet window and a thin dielectric layer is disposed between the conductive layer and the semiconductive layer. The conductive layer is brought to a potential below that of the semiconductive layer so as to drive the photoelectrons out of the recombination zone and consequently improve the quantum yield of the photocathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.