Semiconductor structure processing method and forming method
US11676810B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jul 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure processing method and forming method are provided. The semiconductor structure processing method includes the steps of: providing a semiconductor substrate, which is provided with feature portions having a mask layer on their top surfaces; ashing a semiconductor structure comprising the semiconductor substrate, the feature portions and the mask layer; removing the mask layer; cleaning the semiconductor structure, and forming an oxide layer on surfaces of the feature portions after the feature portions are cleaned; drying the semiconductor structure; and removing the oxide layer. During drying, one feature portion of at least one group of adjacent feature portions is inclined towards a feature portion adjacent thereto, and a distance between the inclined feature portion and the feature portion adjacent thereto after drying is smaller than a distance there between before drying.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.