Method for manufacturing a fluid sensor device and a fluid sensor device

US11676851B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Aurelie Humbert · Brussels, BE
• Simone Severi · Leuven, BE

Key dates

• Filing date: Dec 19, 2018
• Grant date: Jun 13, 2023
• Expiry date: Dec 19, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/4148
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.