Integrated circuit device and method of manufacturing the same
US11676963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2022 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated circuit device includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed apart from an upper surface of the fin-type active region, the plurality of semiconductor patterns each including a channel region; a gate electrode surrounding the plurality of semiconductor patterns, extending in a second direction perpendicular to the first direction, and including a main gate electrode, which is disposed on an uppermost semiconductor pattern of the plurality of semiconductor patterns and extends in the second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns; a spacer structure disposed on both sidewalls of the main gate electrode; and a source/drain region connected to the plurality of semiconductor patterns, disposed at both sides of the gate electrode, and contacting a bottom surface of the spacer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.