PIN photodetector
US11676976B2 · kind B2 · utility
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14References
19Claims
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Key dates
| Filing date | Nov 2, 2020 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jan 9, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.