Semiconductor device
US11676995B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device includes a semiconductor body, an electrode provided on a surface of the semiconductor body. The semiconductor body includes a first semiconductor layer and a second semiconductor layer provided between the first semiconductor layer and the second electrode. The second semiconductor layer includes first and second regions arranged along the surface of the semiconductor body. The first region has a surface contacting the electrode, and the second region includes second conductivity type impurities with a concentration lower than a concentration of the second conductivity type impurities at the surface of the first region. The second semiconductor layer has a first concentration of second conductivity type impurities at a first position in the second region, and a second concentration of second conductivity type impurities at a second position between the first position and the electrode, the second concentration being lower than the first concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.