IGBT device with narrow mesa and manufacture thereof
US11677019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Dec 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
The present application provides an insulated gate bipolar transistor (IGBT) device with narrow mesa and a manufacture thereof. The device comprises: a semiconductor substrate; gate trench structures and emitter trench structures formed on front surface of the semiconductor substrate and alternately arranged along with horizontal direction; wherein the gate trench structures and the emitter trench structures are respectively set in pair along with the arrangement direction, and the pairs of the gate trench structures and the pairs of the emitter trench structures are set in alternate arrangement along with the arrangement direction; well regions formed between the emitter trench structures of one pair; emitter injection regions formed between the gate trench structures of one pair and between the emitter trench structures of one pair, respectively; and wherein, in the region between the emitter trench structures of the one pair, the emitter injection region is above the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.