Semiconductor device including different nitride regions and method for manufacturing same

US11677020B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventors

• Daimotsu Kato · Tokyo, JP
• Yosuke Kajiwara · Yokohama, JP
• Akira Mukai · Kawasaki, JP
• Aya Shindome · Yokohama, JP
• Hiroshi Ono · Setagaya, JP
• Masahiko Kuraguchi · Yokohama, JP

Key dates

• Filing date: Aug 20, 2021
• Grant date: Jun 13, 2023
• Expiry date: Aug 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.