Thin-film transistor substrate and display apparatus comprising the same
US11677030B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Feb 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.