Oxide semiconductor thin-film and thin-film transistor consisted thereof
US11677031B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2019 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Aug 2, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.