Patent · US Active

Method for manufacturing a sensing device

US11677035B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 8, 2021
Grant dateJun 13, 2023
Priority date
Expiry dateDec 8, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/331
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for manufacturing a sensing device is provided. The method includes: providing a substrate; forming a sensing unit on the substrate; forming a first light-shielding layer on the sensing unit; forming a first anti-reflection layer on the sensing unit; and patterning the first light-shielding layer and the first anti-reflection layer using a single lithography process to form a first pinhole corresponding to the sensing unit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.