Method for manufacturing a sensing device
US11677035B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Dec 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/331
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a sensing device is provided. The method includes: providing a substrate; forming a sensing unit on the substrate; forming a first light-shielding layer on the sensing unit; forming a first anti-reflection layer on the sensing unit; and patterning the first light-shielding layer and the first anti-reflection layer using a single lithography process to form a first pinhole corresponding to the sensing unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.