Patent · US Active

Semiconductor laser diode and semiconductor component

US11677212B2 · kind B2 · utility

0Cited by

7References

22Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Alexander Bachmann · Ismaning, DE
Roland Enzmann · Regensburg, DE
Michael Müller · Cambridge, GB

Key dates

Filing date	Sep 20, 2018
Grant date	Jun 13, 2023
Priority date	—
Expiry date	Apr 25, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.