Control circuit for bridge MOSFETs
US11677314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2021 |
| Grant date | Jun 13, 2023 |
| Priority date | — |
| Expiry date | Oct 26, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A control circuit for a plurality of metal-oxide semiconductor field-effect transistors (MOSFETs) in a bridge circuit for rectifying an alternating current (AC) input to generate a direct-current (DC) output includes first and second high side controls and first and second low side controls for providing gate voltage signals to respective MOSFETs in the bridge circuit. Dead time controls are provided for establishing dead time intervals between activation of complementary MOSFETs in the bridge circuit. The low side controls provide gate voltage signals having sloped edges and the dead time controls include Zener diodes having reverse bias thresholds for determining the duration of the dead time intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.