Patent · US Active

Ferroelectric and multiferroic material structures

US11678587B2 · kind B2 · utility

0Cited by

0References

17Claims

0Family size

Assignee

Cornell University · IT

Inventors

Darrell G. Schlom · Thalwil, CH
Rachel A. Steinhardt · Brooktondale, US
Megan Holtz · Washington, US

Key dates

Filing date	Oct 21, 2020
Grant date	Jun 13, 2023
Priority date	—
Expiry date	Feb 5, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/221
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A ferroelectric device includes a substrate, a first electrode on the substrate, and a hexagonal ferroelectric material on the first electrode. The first electrode comprises a single crystal epitaxial material. By using a single crystal epitaxial material for an electrode to a hexagonal ferroelectric material, a high-quality material interface may be provided between these layers, thereby improving the performance of the ferroelectric device by allowing for a reduced coercive field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.