Method for preparing multi-layer hexagonal boron nitride film

US11679978B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Zhiyuan Shi · London, GB
• Tianru Wu · Shanghai, CN
• Guangyuan Lu · Shanghai, CN
• Xiujun Wang · Beijing, CN
• Chao Zhang · Hangzhou City, CN
• Haomin Wang · Shanghai, CN
• Xiaoming Xie · Jing County, CN

Key dates

• Filing date: Oct 14, 2019
• Grant date: Jun 20, 2023
• Expiry date: Jan 8, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2004/04
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.