Patent · US Active

Memory device, operating method of the memory device and memory system comprising the memory device

US11682436B2 · kind B2 · utility

1Cited by
7References
20Claims
0Family size

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Key dates

Filing dateJul 14, 2021
Grant dateJun 20, 2023
Priority date
Expiry dateJul 14, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2254
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device in which reliability of a clock signal is improved is provided. The memory device comprises a data module including a clock signal generator configured to receive an internal clock signal from a buffer, and to generate a first internal clock signal, a second internal clock signal, a third internal clock signal, and a fourth internal clock signal having different phases, on the basis of the internal clock signal, and a first data signal generator configured to generate a first data signal on the basis of first data and the first internal clock signal, generate a second data signal on the basis of second data and the second internal clock signal, generate a third data signal on the basis of third data and the third internal clock signal, and generate a fourth data signal on the basis of fourth data and the fourth internal clock signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.