Crystalline oxide semiconductor thin film, and method of forming the same and thin film transistor and method of manufacturing the same and display panel and electronic device
US11682680B2 · kind B2 · utility
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5References
16Claims
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Key dates
| Filing date | Mar 15, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Jun 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed are a crystalline oxide semiconductor thin film including a crystalline oxide semiconductor including indium, gallium, and tin, the crystalline oxide semiconductor exhibiting a (009) diffraction peak in an X-ray diffraction spectrum, and a method of forming the same, a thin film transistor and a method of manufacturing the same, a display panel, and an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.