Switch body connections to achieve soft breakdown
US11682699B2 · kind B2 · utility
0Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Jan 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6677
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.