Radiation hardened thin-film transistors
US11682734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2021 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Dec 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.