Display device
US11682750B2 · kind B2 · utility
1Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2020 |
| Grant date | Jun 20, 2023 |
| Priority date | — |
| Expiry date | Dec 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
Abstract
Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.