Obtaining a clean nitride surface by annealing
US11688601B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2020 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Jan 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a composite crystalline nitride structure is provided. The method includes depositing a first crystalline nitride layer on a substrate, patterning the first crystalline nitride layer to form a patterned crystalline nitride layer having a top surface and that includes undulations, annealing the patterned crystalline nitride layer at a temperature between 300° C. to 850° C. to form an annealed patterned crystalline nitride layer, and depositing a second crystalline nitride layer on the annealed patterned crystalline nitride layer. The second crystalline nitride layer is lattice-matched to the underlying annealed patterned crystalline nitride layer to within 2%, thereby forming the composite crystalline nitride structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.