DRAM chiplet structure and method for manufacturing the same
US11688681B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 11, 2021 |
| Grant date | Jun 27, 2023 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A DRAM chiplet structure is provided. The DRAM chiplet structure includes a first hybrid bonding structure, a DRAM interface structure, and a first DRAM core structure. The first hybrid bonding structure has a first surface and a second surface. The DRAM interface structure is in contact with the first surface of the first hybrid bonding structure. The first DRAM core structure is in contact with the second surface of the first hybrid bonding structure. The DRAM interface structure is electrically connected to the first DRAM core structure through the first hybrid bonding structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.